Search results for "Device simulation"

showing 2 items of 2 documents

Single-Event Burnout Mechanisms in SiC Power MOSFETs

2018

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed

Nuclear and High Energy PhysicsMaterials sciencesingle-event burnoutpower MOSFETs01 natural sciencesdevice simulationselektroniikkakomponentitchemistry.chemical_compoundsilicon carbide0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETheavy ions010302 applied physicspower devicesta114ta213010308 nuclear & particles physicsbusiness.industryionisoiva säteilyBipolar junction transistorsingle event effectsThreshold voltageImpact ionizationsäteilyfysiikkaNuclear Energy and EngineeringchemistrytransistoritOptoelectronicsbusinessCurrent densityVoltageIEEE Transactions on Nuclear Science
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Consistent device simulation model describing perovskite solar cells in steady-state, transient, and frequency domain

2019

​This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.9b04991

Steady state (electronics)Materials scienceIMPSImpedance spectroscopy610 Medicine & health02 engineering and technology010402 general chemistrycomputer.software_genre01 natural sciencesChemical societyGeneral Materials ScienceTransient (computer programming)Device simulation10266 Clinic for Reconstructive SurgeryMaterials621.3: Elektrotechnik und ElektronikCèl·lules fotoelèctriquesTrapsPerovskite (structure)Drift-diffusion modelingProgramming languagePerovskite solar cellsHysteresis021001 nanoscience & nanotechnology2500 General Materials Science0104 chemical sciencesMobile ionsFrequency domainTransient photo-current0210 nano-technologycomputer
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